Julio C. Tinoco was born in Nezahualcóyotl City, Mexico, in 1976. He received the Communication and Electronics Engineer degree from the Escuela Superior de Ingeniería Mecánica y Eléctrica del Instituto Politécnico Nacional (ESIME-IPN), Mexico City, Mexico, in 1999, and the Ph.D. degree in electrical engineering from Centro de Investigación y de Estudios Avanzados (CINVESTAV-IPN), Mexico City, in 2004. He worked on fabrication and characterization of ultra-thin dielectric films for MOS transistor applications.
In 2005 he was a Professor in the Universidad de San Martín de Porres, Lima, Peru. In 2006 he was a post-doctoral researcher in the Universitat Rovira I Virgili, Tarragona, Spain. In 2007–2008 he was a post-doctoral researcher in the Microwave Laboratory of the Université catholique de Lovain (UCL), Louvan-la-Neuve, Belgium. In 2009–2012 he has been a Full Professor in the Facultad de Ingeniería of the Universidad Nacional Autónoma de México (FI-UNAM), Mexico City. He is currently a Researcher with the Micro and Nanotechnology Research Center, University of Veracruz, Veracruz, Mexico.
His current research interest include characterization, modeling and extraction parameters of advanced MOS transistors, fabrication and characterization of solution processing electron devices, and characterization and modeling of flexible electron devices
